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germanium$31452$ - перевод на греческий
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![Structure of a [[vacuum tube]] diode. The filament itself may be the cathode, or more commonly (as shown here) used to heat a separate metal tube which serves as the cathode.](https://commons.wikimedia.org/wiki/Special:FilePath/Diode-english-text.svg?width=200 "Structure of a [[vacuum tube]] diode. The filament itself may be the cathode, or more commonly (as shown here) used to heat a separate metal tube which serves as the cathode.")
![[[Current–voltage characteristic]] of a p–n junction diode showing three regions: '''Breakdown''', '''Reverse''' biased, '''Forward''' biased. The exponential's "knee" is at V<sub>d</sub>. The leveling off region which occurs at larger forward currents is not shown.](https://commons.wikimedia.org/wiki/Special:FilePath/Diode current wiki.png?width=200 "[[Current–voltage characteristic]] of a p–n junction diode showing three regions: '''Breakdown''', '''Reverse''' biased, '''Forward''' biased. The exponential's \"knee\" is at V<sub>d</sub>. The leveling off region which occurs at larger forward currents is not shown.")
![doping]] level, leading to built-in potential of ~0.59V. Observe the different [[quasi Fermi level]]s for conduction band and valence band in n and p regions (red curves).](https://commons.wikimedia.org/wiki/Special:FilePath/PN band.gif?width=200 "doping]] level, leading to built-in potential of ~0.59V. Observe the different [[quasi Fermi level]]s for conduction band and valence band in n and p regions (red curves).")
![envelope demodulator]] circuit.](https://commons.wikimedia.org/wiki/Special:FilePath/Simple envelope detector.svg?width=200 "envelope demodulator]] circuit.")
![[[Light-emitting diode]] (LED)](https://commons.wikimedia.org/wiki/Special:FilePath/LED symbol.svg?width=200 "[[Light-emitting diode]] (LED)")
![Photodiode]]](https://commons.wikimedia.org/wiki/Special:FilePath/Photodiode symbol.svg?width=200 "Photodiode]]")
![Schottky diode]]](https://commons.wikimedia.org/wiki/Special:FilePath/Schottky diode symbol.svg?width=200 "Schottky diode]]")
![[[Transient-voltage-suppression diode]] (TVS)](https://commons.wikimedia.org/wiki/Special:FilePath/Transient voltage suppression diode symbol.svg?width=200 "[[Transient-voltage-suppression diode]] (TVS)")
![[[Tunnel diode]]](https://commons.wikimedia.org/wiki/Special:FilePath/Tunnel diode symbol.svg?width=200 "[[Tunnel diode]]")
![Varicap]]](https://commons.wikimedia.org/wiki/Special:FilePath/Varicap symbol.svg?width=200 "Varicap]]")
![[[Zener diode]]](https://commons.wikimedia.org/wiki/Special:FilePath/Zener diode symbol.svg?width=200 "[[Zener diode]]")
![Typical diode packages in same alignment as diode symbol. Thin bar depicts the [[cathode]].](https://commons.wikimedia.org/wiki/Special:FilePath/Diode pinout en fr.svg?width=200 "Typical diode packages in same alignment as diode symbol. Thin bar depicts the [[cathode]].")
Определение
Википедия
SiGe ( or ), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture. SiGe is also used as a thermoelectric material for high-temperature applications (>700 K).
